"Long channel vs short channel device"

hi, I wud like to know what is the difference between long channel and short channel devices in MOSFETS. Thanks.

Asked By: logic_gate
On: Feb 17, 2005 1:54:09 PM

Comments(4)

hey there is some bug in website, the above comment that i gave was for some other question..... but strangly it's appearing here

Comment By: shravanxp
On: Mar 7, 2005 6:26:06 AM

any Static-CMOS digital circuit has two parts "PULLUP" and "PULLDOWN"; "PULL UP" charges the o/p node to high "PULL DOWN" discharges o/p node to low. (u might know both r mutually exclusive for static-CMOS ckt) u can make both the parts with any type of transistor(either NMOS or PMOS) , but which is better for each part. use PMOS for PULLUP and NMOS for PULLDOWN (why??) if u use NMOS for PULLUP then the o/p node will not get completely charged to Vdd, (same reasonin for why not PMOS for PULLDOWN)... ( what is this?? why is this happening?? comeon look at the "channel existency conditions" for each transistor)

Comment By: shravanxp
On: Feb 28, 2005 7:08:12 AM

Hi, One more is that ,for short channel there is one disadvantage, for relaively small voltages like 20volt there will be conduction(even without VGS) as depletion region starts from drain extends to source(NMOS) .This is called Punch through Bye

Comment By: venkateshr
On: Feb 18, 2005 3:50:51 AM

hi For MOSFETS , when Vds>Vgs-Vt,long channel enter the saturated region;for short channel device, when Vds>Vdsat,the device enter velocity saturated region. for the Id as funcation of Vgs,for the long channel the relation is quadratic, for the short channel is linear.

Comment By: chen214
On: Feb 17, 2005 2:26:30 PM

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