Parameters affected by decreasing the length


What parameters can affect when we go from 1 micron leangth to say 0.13 micron channel length in the MOS? thanks, Prathit

Asked By: prathit
On: Feb 17, 2004 9:19:48 PM

Comments(5)



No rskurane. Power dissipated is Vdd x Id. and we know that Id is inversely proportional to L. Now, when the L reduces then Id increases which would cause the power dissipated to increase and thus, power consumption is reduced.
How by reducing the area does the threshold voltage reduce? It is a process parameter and is independant on W and L. Thus the idea of reduced power consumption is not valid
Hi, The current Id inversley dependes on L. So if you reduce the length the current will increase.
there may hot electron effect...which will affect the normal operation of mos.
As far as area and power goes: When you scale down the device size from 1 to .13 you have the advantage of less area, less threshold voltage, less total power dissipation etc.. But the leakage power increases due to the decrease in threshold voltage.
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